ETCHING SOLUTION FOR REVEALING P-N-JUNCTIONS IN PBS AND PBS1-XSEX

被引:3
|
作者
PREIER, H [1 ]
PFEIFFER, H [1 ]
机构
[1] AEG TELEFUNKEN,FORSCH INST,D-6000 FRANKFURT,WEST GERMANY
关键词
D O I
10.1149/1.2401868
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:595 / 596
页数:2
相关论文
共 50 条
  • [1] DENSITY OF TRAP TUNNELING STATES IN DIFFUSED PBS1-XSEX P-N-JUNCTIONS
    HOERSTEL, W
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01): : 361 - 366
  • [2] P-N-JUNCTIONS PREPARED WITH PBSE AND PBS1-XSEX HOT-WALL EPITAXIAL LAYERS
    DUH, K
    PREIER, H
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (01): : 29 - 29
  • [3] PROCEDURE FOR POLISHING PBS AND PBS1-XSEX
    FERRANTE, GA
    LAVINE, MC
    HARMAN, TC
    DONNELLY, JP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (02) : 310 - 311
  • [4] PbS和PbS1-xSex的抛光程序
    尚鐸
    激光与红外, 1974, (03) : 27 - 28
  • [5] N-TYPE PBS AND PBS1-XSEX LAYERS PREPARED BY HOT-WALL EPITAXY
    BLEICHER, M
    WURZINGER, HD
    MAIER, H
    PREIER, H
    JOURNAL OF MATERIALS SCIENCE, 1977, 12 (02) : 317 - 322
  • [6] NO SPECTROSCOPY BY PULSED PBS1-XSEX DIODE LASERS
    PREIER, H
    RIEDEL, W
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3955 - 3958
  • [7] IMPROVED PBS1-XSEX TUNABLE DIODE LASERS
    BUTLER, JF
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 262 - 262
  • [8] OPTICAL-PROPERTIES OF EPITAXIAL PBS1-XSEX FILMS
    SINYATYNSKII, AA
    SHOTOV, AP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (12): : 1413 - 1414
  • [9] FORMATION OF P-N-JUNCTIONS IN PBS BY ION-IMPLANTATION
    BELYANSKII, MP
    GASKOV, AM
    DASHEVSKII, ZM
    ROZHKOVA, EV
    RULENKO, MP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (11): : 1271 - 1272
  • [10] Compositional effects on properties of PbS1-xSex thin films
    Department of Physics, S.S.V. College, Hapur, India
    不详
    J. Optoelectron. Adv. Mat., 2009, 7 (935-939):