ATOMIC LAYER EPITAXY OF SI USING ATOMIC H

被引：47
|
作者：
IMAI, S
IIZUKA, T
SUGIURA, O
MATSUMURA, M
机构：
[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152
来源：
THIN SOLID FILMS | 1993年 / 225卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(93)90149-J
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Atomic H is proposed for the reducer gas in the atomic layer epitaxy (ALE) of Si. Its high reactivity makes it possible to remove surface-terminating adsorbates, which cause the self-limitation of unwanted successive deposition of Si compounds, at low temperature. The ALE growth was attempted by the alternating exposure of the Si(111) substrate to SiH2Cl2 and H. Ideal monolayer growth was obtained and the growth rate was independent of the gas volumes and the substrate temperature. The lower ALE limit of the substrate temperature was 540-degrees-C, about 250-degrees-C lower than the case of H-2 as the reducer gas.
引用
收藏
页码：168 / 172
页数：5
相关论文
共 50 条
  • [1] Patterned atomic layer epitaxy of Si/Si(001):H
    Owen, James H. G.
    Ballard, Joshua
    Randall, John N.
    Alexander, Justin
    Von Ehr, James R.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (06):
  • [2] Atomic-layer-epitaxy of Si
    Ikeda, K
    Yanase, J
    Sugahara, S
    Matsumura, M
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S447 - S458
  • [3] CONTROL OF GAAS ON SI INTERFACE USING ATOMIC LAYER EPITAXY
    KITAHARA, K
    OHTSUKA, N
    UEDA, O
    FUNAGURA, M
    OZEKI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2457 - L2459
  • [4] SUB-ATOMIC-LAYER EPITAXY OF SI USING SI2 H-6
    SUDA, Y
    ISHIDA, M
    YAMASHITA, M
    IKEDA, H
    APPLIED SURFACE SCIENCE, 1994, 82-3 : 332 - 337
  • [5] Si atomic-layer epitaxy using thermally cracked Si2H6
    Suda, Y
    Misato, Y
    Shiratori, D
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2390 - 2392
  • [6] ATOMIC LAYER EPITAXY OF GAAS ON SI BY MOCVD
    KARAM, NH
    HAVEN, VE
    VERNON, SM
    TRAN, JC
    ELMASRY, NA
    III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 331 - 336
  • [7] POTENTIAL SI ATOMIC LAYER EPITAXY PROCESSES USING HALOGENATED SI PRECURSORS
    KOLESKE, DD
    GATES, SM
    BEACH, DB
    THIN SOLID FILMS, 1993, 225 (1-2) : 173 - 176
  • [8] IMPROVED CDTE LAYERS ON GAAS AND SI USING ATOMIC LAYER EPITAXY
    WANG, WS
    EHSANI, H
    BHAT, I
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) : 873 - 878
  • [9] ATOMIC LAYER EPITAXY OF SI ON GE(100) USING SI2CL6 AND ATOMIC-HYDROGEN
    KOLESKE, DD
    GATES, SM
    APPLIED PHYSICS LETTERS, 1994, 64 (07) : 884 - 886
  • [10] COMPARISON OF CHEMICAL SCHEMES FOR SI ATOMIC LAYER EPITAXY
    GATES, SM
    JOURNAL OF PHYSICAL CHEMISTRY, 1992, 96 (25): : 10439 - 10443
12345