METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF GAXIN1-XSB TERNARY ALLOYS

Metalorganic chemical vapor deposition (MOCVD) of ternary GaxIn1-xSb alloys on GaSb and GaAs substrates has been investigated at atmospheric pressure, using TMGa, TMIn and TMSb as source materials. The optimized growth parameters obtained by experiment were a growth temperature of 600 degrees C and a vapor III/V ratio of 0.4. It was found that the growth temperature was a key growth parameter for surface morphology and crystalline quality of the GaxIn1-xSb epilayer. The influence of the growth temperature on the Ga solid composition was previously explained. The Ga solid composition was proportional to the Ga vapor composition and vapor III/V ratio, respectively. The Ga distribution coefficient was found to be 1.06 under the optimized growth parameters and decreased with decreasing growth temperature. The results of the Hall measurement for GaxIn1-xSb alloys were presented with p-type background of the epilayers.