CHARACTERIZATION OF GALNP/GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH DIFFERENT COLLECTOR DESIGNS

被引：25
|
作者：
SONG, JI
CANEAU, C
HONG, WP
CHOUGH, KB
机构：
[1] Bellcore, Red Bank, NJ 07701
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 21期
关键词：
D O I：
10.1049/el:19931252
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characteristics of InGaP/GaAs:C double-heterojunction bipolar transistors (DHBTs) with different collector layer designs are investigated and compared with those of a single heterojunction bipolar transistor. By inserting highly-doped n-type GaAs and InGaP layers in the collector, current saturation characteristics of a DHBT, comparable to those of a single heterojunction bipolar transistor, are achieved. The breakdown voltage of the DHBT was substantially higher than that of a single-heteojunction bipolar transistor with the same collector doping and thickness.
引用
收藏
页码：1881 / 1883
页数：3
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