SPECTROSCOPIC ELLIPSOMETRY OF OPTICAL-TRANSITIONS IN THIN STRAINED SI1-XGEX FILMS

被引：28
|
作者：
FERRIEU, F
BECK, F
DUTARTRE, D
机构：
[1] France Télécom CNET-CNS, 38243 Meylan Cedex
来源：
SOLID STATE COMMUNICATIONS | 1992年 / 82卷 / 06期
关键词：
D O I：
10.1016/0038-1098(92)90743-S
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The experimental data obtained from spectroscopic ellipsometry (tan-PSI and cos-DELTA) can be differentiated in Order to determine accurately (+/- 20 meV) the position in photon energy of the optical transitions in the band structure of a crystalline material such as Si or Ge. The technique is applied to Si1-xGex (x<20%) alloyed strained films and enables determination of the so-called E'0, E1 and E2 transition displacements versus the x fraction of Ge present in these alloys.
引用
收藏
页码：427 / 430
页数：4
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