MAGNETIZATION REVERSAL IN SMFETI (002) TEXTURED FILMS WITH THE THMN12 STRUCTURE

被引：1
|
作者：
PANAGIOTOPOULOS, I
ZOUGANELIS, G
NIARCHOS, D
机构：
[1] Institute of Materials Science, NCRS Demokritos
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 03期
关键词：
D O I：
10.1063/1.356355
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
SmFeTi films with the ThMn12 structure were prepared with a rf magnetron technique. The magnetization reversal mechanisms are studied by magnetization measurements. The results indicate a domain wall pinning mechanism.
引用
收藏
页码：1689 / 1692
页数：4
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