CHANNEL WIDTH EFFECT ON MOSFET BREAKDOWN

被引：1
|
作者：
FONG, Y
LIANG, GC
VANDUZER, T
HU, C
机构：
[1] Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 05期
关键词：
D O I：
10.1109/16.129124
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wide-channel MOSFET's have typically 10 to 30% lower breakdown voltages than narrow-width (W almost-equal-to L) transistors and are less likely to exhibit clear snapback characteristics. These observations can be explained using a simplified model to determine the width dependence of the MOSFET substrate resistance. The normalized substrate current I(SUB)/W required for source turn-on predicted by this model is found to decrease by an order of magnitude for wide-channel-width transistors in agreement with measured data. This results in the observed decrease in breakdown voltage for wide-channel MOSFET's.
引用
收藏
页码：1265 / 1267
页数：3
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