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INGAASP PHOTO-DIODES
被引:32
|
作者
:
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
STILLMAN, GE
COOK, LW
论文数:
0
引用数:
0
h-index:
0
COOK, LW
TABATABAIE, N
论文数:
0
引用数:
0
h-index:
0
TABATABAIE, N
BULMAN, GE
论文数:
0
引用数:
0
h-index:
0
BULMAN, GE
ROBBINS, VM
论文数:
0
引用数:
0
h-index:
0
ROBBINS, VM
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1983年
/ 30卷
/ 04期
关键词
:
D O I
:
10.1109/T-ED.1983.21131
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:364 / 381
页数:18
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[1]
INGAASP AVALANCHE PHOTO-DIODES
YEATS, R
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机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
YEATS, R
CHIAO, SH
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VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
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CHIAO, SH
IEEE TRANSACTIONS ON ELECTRON DEVICES,
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[2]
LEAKAGE CURRENT IN INGAASP AVALANCHE PHOTO-DIODES
YEATS, R
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CHIAO, SH
APPLIED PHYSICS LETTERS,
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[3]
LONG-WAVELENGTH INGAASP AVALANCHE PHOTO-DIODES
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APPLIED PHYSICS LETTERS,
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[4]
INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN
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INGAASP-INP DOUBLE-HETEROSTRUCTURE PHOTO-DIODES
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UMENO, M
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JAPANESE JOURNAL OF APPLIED PHYSICS,
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[6]
TUNNELING PROCESSES IN THE REVERSE CURRENT OF INGAASP PIN PHOTO-DIODES
TABATABAIE, N
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UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
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LEPKOWSKI, TR
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[7]
MULTIPLICATION NOISE IN PLANAR INP INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES
SHIRAI, T
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NEW WAVELENGTH-DEMULTIPLEXING INGAASP-INP PHOTO-DIODES
TOBE, M
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机构:
NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
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NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
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NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
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[9]
INP-INGAASP AVALANCHE PHOTO-DIODES WITH NEW GUARD RING STRUCTURE
OSAKA, F
论文数:
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[10]
REQUIRED DONOR CONCENTRATION OF EPITAXIAL LAYERS FOR EFFICIENT INGAASP AVALANCHE PHOTO-DIODES
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JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
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