A BIPOLAR PHOTODETECTOR COMPATIBLE WITH STANDARD CMOS TECHNOLOGY

被引：8
|
作者：
VIDAL, MP [1 ]
BAFLEUR, M [1 ]
BUXO, J [1 ]
SARRABAYROUSE, G [1 ]
机构：
[1] UNIV CENT BARCELONA,E-08028 BARCELONA,SPAIN
来源：
SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 08期
关键词：
D O I：
10.1016/0038-1101(91)90225-N
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new CMOS compatible bipolar photodetector is presented. The basic idea is that the bipolar characteristics are optimized independently of the photosensitivity. In order to evaluate the performance of this structure, a silicon test vehicle has been realized. A gain value as high as 120 was obtained using a biased polysilicon field-plate on top of the base surface. The proposed photodetector has shown very satisfactory properties such as a sensitivity of 0.75 electrons per photon, a wide dynamic range and a response time of 4-5-mu-s. The possible application to a wide-range, self-adaptive photometer is discussed.
引用
收藏
页码：809 / 814
页数：6
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