INTRAWELL EXCITON TRANSPORT IN MONOLAYER-FLAT GAAS/ALGAAS SINGLE QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：9
|
作者：
TU, CW [1 ]
MILLER, RC [1 ]
PETROFF, PM [1 ]
KOPF, RF [1 ]
DEVEAUD, B [1 ]
DAMEN, TC [1 ]
SHAH, J [1 ]
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期
关键词：
D O I：
10.1116/1.584411
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：610 / 612
页数：3
相关论文
共 50 条
  • [1] EXTREMELY FLAT INTERFACES IN GAAS ALGAAS QUANTUM-WELLS GROWN ON GAAS (411) A SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    SHIMOMURA, S
    WAKEJIMA, A
    ADACHI, A
    OKAMOTO, Y
    SANO, N
    MURASE, K
    HIYAMIZU, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (12A): : L1728 - L1731
  • [2] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS QUANTUM WELLS ON CHANNELED SUBSTRATES
    MEIER, HP
    VANGIESON, E
    WALTER, W
    HARDER, C
    KRAHL, M
    BIMBERG, D
    APPLIED PHYSICS LETTERS, 1989, 54 (05) : 433 - 435
  • [3] SPECTROSCOPIC STUDY OF MONOLAYER INAS/GAAS SINGLE AND MULTIPLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    BRANDT, O
    CINGOLANI, R
    TAPFER, L
    SCAMARCIO, G
    PLOOG, K
    SUPERLATTICES AND MICROSTRUCTURES, 1991, 9 (02) : 147 - 150
  • [4] Extremely flat interfaces in GaAs/AlGaAs quantum wells grown on GaAs(411)A substrates by molecular beam epitaxy
    Shimomura, Satoshi, 1728, Publ by JJAP, Minato-ku, Japan (32):
  • [5] ABRUPT HETEROJUNCTIONS OF ALGAAS/GAAS QUANTUM-WELLS GROWN ON (111)A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    YAMAMOTO, T
    FUJII, M
    TAKEBE, T
    LOVELL, D
    KOBAYASHI, K
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 31 - 36
  • [6] ATOMICALLY FLAT ALGAAS/GAAS (110) HETEROINTERFACE GROWN BY MOLECULAR-BEAM EPITAXY
    TANAKA, G
    HIRAKAWA, K
    ICHINOSE, H
    IKOMA, T
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 25 - 30
  • [7] GAAS/ALGAAS QUANTUM-WELLS GROWN OVER EPITAXIAL COAL LAYERS WITH MOLECULAR-BEAM EPITAXY
    GOODHUE, WD
    LE, HQ
    JOHNSON, GD
    BALES, JW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 783 - 787
  • [8] INEQUIVALENCE OF NORMAL AND INVERTED INTERFACES OF MOLECULAR-BEAM EPITAXY GROWN ALGAAS GAAS QUANTUM-WELLS
    KOHRBRUCK, R
    MUNNIX, S
    BIMBERG, D
    MARS, DE
    MILLER, JN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 798 - 804
  • [9] EXTREMELY FLAT INTERFACES IN GAAS/ALGAAS QUANTUM-WELLS WITH HIGH AL CONTENT (0.7) GROWN ON GAAS (411)A SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    SHIMOMURA, S
    KANEKO, S
    MOTOKAWA, T
    SHINOHARA, K
    ADACHI, A
    OKAMOTO, Y
    SANO, N
    MURASE, K
    HIYAMIZU, S
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 409 - 414
  • [10] INTERFACE DISORDER IN GAAS/ALGAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE-TEMPERATURE
    HAYAKAWA, T
    SUYAMA, T
    TAKAHASHI, K
    KONDO, M
    YAMAMOTO, S
    YANO, S
    HIJIKATA, T
    APPLIED PHYSICS LETTERS, 1985, 47 (09) : 952 - 954
12345