HIGH-EFFICIENCY QUASIMICROWAVE GAAS-FET POWER-AMPLIFIER

被引：5

作者：

NOJIMA, T

NISHIKI, S

CHIBA, K

机构：

[1] NTT, Yokusuka, Jpn, NTT, Yokusuka, Jpn

来源：

关键词：

D O I：

10.1049/el:19870370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：512 / 513

页数：2

共 50 条

[1] GAAS-FET POWER-AMPLIFIER MODULE WITH HIGH-EFFICIENCY
CHIBA, K
KANMURI, N
[J]. ELECTRONICS LETTERS, 1983, 19 (24) : 1025 - 1026
[2] MONOLITHIC 50 GHZ GAAS-FET POWER-AMPLIFIER
CAMILLERI, N
CHYE, P
PRIORIELLO, R
[J]. GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989, 1989, : 267 - 270
[3] GAAS-FET POWER-AMPLIFIER FOR 64 QAM DIGITAL RADIO SYSTEM
BAINS, D
BALSHEM, H
[J]. MICROWAVE JOURNAL, 1985, 28 (10) : 101 - &
[4] A HIGH-EFFICIENCY AUDIO POWER-AMPLIFIER
NAKAGAKI, H
AMADA, N
INOUE, S
[J]. JOURNAL OF THE AUDIO ENGINEERING SOCIETY, 1983, 31 (06): : 430 - 436
[5] HIGH-EFFICIENCY POWER-AMPLIFIER DESIGN
GONCHAROV, AY
[J]. TELECOMMUNICATIONS AND RADIO ENGINEERING, 1979, 33-4 (09) : 129 - 130
[6] HIGH-EFFICIENCY MOSFET POWER-AMPLIFIER
STOCCHINO, G
[J]. ELECTRONIC ENGINEERING, 1984, 56 (688): : 34 - 36
[7] DESIGN AND CHARACTERIZATION OF A GAAS-FET POWER-AMPLIFIER FOR A 64 QAM DIGITAL RADIO TRANSMITTER
BLAIR, GM
DALY, JJ
MOSS, JF
[J]. MICROWAVE JOURNAL, 1988, 31 (01) : 141 - &
[8] ANALYSIS OF PHASE CHARACTERISTICS OF A GAAS-FET POWER-AMPLIFIER FOR DIGITAL CELLULAR PORTABLE TELEPHONES
ISHIZAKI, T
IKEDA, H
YOSHIKAWA, Y
UWANO, T
[J]. ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1994, 77 (04): : 1 - 9
[9] HIGH-POWER GAAS-FET AMPLIFIER FOR TWT REPLACEMENT
ARAI, Y
MURAI, S
SAKANE, T
[J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1979, 15 (03): : 63 - 82
[10] HIGH-EFFICIENCY Q-BAND GAAS-FET OSCILLATOR
TSERNG, HQ
KIM, B
[J]. ELECTRONICS LETTERS, 1984, 20 (07) : 297 - 298