ACCURACY OF VARIOUS THEORIES OF BAND-GAP NARROWING IN P-DOPED SEMICONDUCTORS

被引：15
|
作者：
BARDYSZEWSKI, W [1 ]
YEVICK, D [1 ]
机构：
[1] UNIV LUND, DEPT THEORET PHYS, S-22362 LUND, SWEDEN
来源：
PHYSICAL REVIEW B | 1987年 / 35卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.35.619
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：619 / 625
页数：7
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