CHARGE-DENSITY-WAVE MEMORY LOSS UNDER AC BIAS IN NBSE3

被引：10

作者：

HARDNER, HT ^{[1
]}

MARLEY, AC ^{[1
]}

WEISSMAN, MB ^{[1
]}

THORNE, RE ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT PHYS,ITHACA,NY 14853

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.46.9833

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Despite the similarity of the broadband noise measured with a dc current in the two charge-density-wave materials, NbSe3 and o-TaS3, the noise measured with ac bias is very different. The memory function for the underlying configurational fluctuations in NbSe3 is much more easily disrupted by bias switching, suggesting a different mechanism.

引用

页码：9833 / 9836

页数：4

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