ELECTRODEPOSITION KINETICS OF GALLIUM-ARSENIDE

被引：2
|
作者：
BABU, SM
DURAI, L
DHANASEKARAN, R
RAMASAMY, P
机构：
[1] Crystal Growth Centre, Anna University, Madras
来源：
BULLETIN OF MATERIALS SCIENCE | 1990年 / 13卷 / 1-2期
关键词：
Electrodeposition of GaAs; kinetic model; voltammogram;
D O I：
10.1007/BF02744856
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A kinetic model has been developed for the electrodeposition of GaAs from solution containing reducible ions of both constituents and is based on the generalised Butler-Volmer equation. The effect of hydrogen ion concentration and activities of ions on the total current density is studied. Voltammograms corresponding to various values of hydrogen ion concentration and activities of ions are constructed by the computer simulation technique. © 1990 The Indian Academy of Sciences.
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页码：43 / 49
页数：7
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