CONTROL OF A SELF-ALIGNED W-SILICIDE PROCESS BY ANNEALING AMBIENCE

被引:1
|
作者
TORRES, J [1 ]
PALLEAU, J [1 ]
BOURHILA, N [1 ]
OBERLIN, JC [1 ]
DENEUVILLE, A [1 ]
BENYAHIA, M [1 ]
机构
[1] CNRS,F-38042 GRENOBLE,FRANCE
来源
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
关键词
D O I
10.1051/jphyscol:1988437
中图分类号
学科分类号
摘要
引用
收藏
页码:183 / 186
页数:4
相关论文
共 50 条
  • [1] CHARACTERIZATION OF A SELF-ALIGNED COBALT SILICIDE PROCESS
    MORGAN, AE
    BROADBENT, EK
    DELFINO, M
    COULMAN, B
    SADANA, DK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 925 - 935
  • [2] Annealing process influence and dopant-silicide interaction in self-aligned NiSi technology
    Ru, GP
    Jiang, YL
    Qu, XP
    Li, BZ
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 451 - 455
  • [3] SELF-ALIGNED TITANIUM SILICIDE PROCESSING BY RAPID THERMAL ANNEALING
    LUBIC, KG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C314 - C314
  • [4] SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING
    BRAT, T
    OSBURN, CM
    FINSTAD, T
    LIU, J
    ELLINGTON, B
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) : 1451 - 1458
  • [5] A novel self-aligned process for platinum silicide nanowires
    Zhang, Zhen
    Hellstrom, Per-Erik
    Lu, Jun
    Ostling, Mikael
    Zhang, Shi-Li
    MICROELECTRONIC ENGINEERING, 2006, 83 (11-12) : 2107 - 2111
  • [6] Robust, scalable self-aligned platinum silicide process
    Zhang, Z
    Zhang, SL
    Östling, M
    Lu, J
    APPLIED PHYSICS LETTERS, 2006, 88 (14)
  • [7] Dopant effects on lateral silicide growth in self-aligned titanium silicide process
    Park, JS
    Byun, JS
    Sohn, DK
    Lee, BH
    Park, JW
    Kim, JJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (10) : 3585 - 3589
  • [8] OPTIMIZATION OF A SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR SUBMICRON TECHNOLOGY
    LEVY, D
    DELPECH, P
    PAOLI, M
    MASUREL, C
    VERNET, M
    BRUN, N
    JEANNE, JP
    GONCHOND, JP
    ADAHANIFI, M
    HAOND, M
    DOUVILLE, TT
    MINGAM, H
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1990, 3 (04) : 168 - 175
  • [9] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS
    ALPERIN, ME
    HOLLAWAY, TC
    HAKEN, RA
    GOSMEYER, CD
    KARNAUGH, RV
    PARMANTIE, WD
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 61 - 69
  • [10] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS
    ALPERIN, ME
    HOLLAWAY, TC
    HAKEN, RA
    GOSMEYER, CD
    KARNAUGH, RV
    PARMANTIE, WD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 141 - 149