ANNEALING OF DIVACANCY-RELATED INFRARED-ABSORPTION BANDS IN BORON-DOPED SILICON

被引：16
|
作者：
SVENSSON, BG
JOHNSSON, K
XU, DX
SVENSSON, JH
LINDSTROM, JL
机构：
[1] SWEDISH DEF RES ESTAB,S-58111 LINKOPING,SWEDEN
[2] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1989年 / 112卷 / 1-2期
关键词：
D O I：
10.1080/10420158908213017
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：439 / 447
页数：9
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