共 50 条
- [2] NEW SOLUTIONS AND APPLICATIONS OF ELECTRO-LIQUID EPITAXY .1. [J]. ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 54 (05): : 938 - 942
- [4] ELECTRO-LIQUID EPITAXY OF INAS1-XSBX SOLID-SOLUTIONS [J]. ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 54 (11): : 2233 - 2237
- [5] CHARACTERISTICS OF ELECTRO-LIQUID EPITAXY OF ALXGA1-XAS SOLID-SOLUTIONS [J]. ZHURNAL TEKHNICHESKOI FIZIKI, 1981, 51 (10): : 2187 - 2190
- [6] SPEED OF FILM GROWTH IN THE PROCESS OF EQUILIBRIUM ELECTRO-LIQUID EPITAXY [J]. ZHURNAL TEKHNICHESKOI FIZIKI, 1982, 52 (02): : 400 - 402
- [7] APPLICABILITY OF DIFFUSION-APPROXIMATION IN ELECTRO-LIQUID EPITAXY (ELE) LAYERS [J]. ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 54 (05): : 934 - 937
- [8] EQUILIBRIUM ELECTRO-LIQUID GAAS(1-X)SBX/GASB EPITAXY [J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1985, 11 (04): : 230 - 233
- [9] SOME PECULIARITIES OF MASS-TRANSFER IN THE CASE OF ELECTRO-LIQUID EPITAXY OF GALLIUM-ARSENIDE [J]. KRISTALLOGRAFIYA, 1982, 27 (04): : 742 - 750
- [10] DOPING OF SOLUTIONS DURING LIQUID - PHASE EPITAXY .2. [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1977, (07): : 15 - 21