WIDE TERRACE FORMATION DURING METALORGANIC VAPOR-PHASE EPITAXY OF GAAS, ALAS, AND ALGAAS

被引：18
|
作者：
SHINOHARA, M
TANIMOTO, M
YOKOYAMA, H
INOUE, N
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期
关键词：
D O I：
10.1063/1.112069
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs, Al0.35Ga0.65As, and AlAs surface terrace structures formed during metalorganic vapor phase epitaxy (MOVPE) on vicinal (001) surfaces are investigated. The minimal terrace width for two-dimensional (2-D) nucleation for AlGaAs is almost equal to that for GaAs. In contrast, for AlAs it is reduced and the growth mode becomes three dimensional at temperatures below 580-degrees-C. Monolayer step-flow growth without 2-D islands and terraces about 1 mum wide are obtained above 630-degrees-C for all materials. These results are very different from those by molecular beam epitaxy and suggest that MOVPE is superior to grow wide uniform heterointerfaces for GaAs/AlAs and GaAs/AlGaAs.
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收藏
页码：1418 / 1420
页数：3
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