BISTABLE FIELD-EFFECT TRANSISTOR (BISFET) - A NOVEL HETEROSTRUCTURE DEVICE

被引：1
|
作者：
OJHA, JJ
SIMMONS, JG
机构：
[1] Dept. of Engineering Physics, Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4M1
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 11期
关键词：
FIELD-EFFECT TRANSISTORS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19930687
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The operation of a novel heterostructure device, the bistable field effect transistor (BISFET), is described. This device contains a positive feedback loop between the gate and source terminals, which is expected to lead to transitions between high and low current states with varying drain bias. These abrupt transitions should generate substantial hysteresis in the output characteristics, making the device bistable. The transition voltages and hysteresis are expected to increase with increasing gate bias.
引用
收藏
页码：1028 / 1029
页数：2
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