CHEMICAL-DEPOSITION OF BI2S3 THIN-FILMS FROM THIOACETAMIDE BATH

被引：54
|
作者：
DESAI, JD
LOKHANDE, CD
机构：
[1] Department of Physics, Shivaji University, Kolhapur
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1995年 / 41卷 / 02期
关键词：
CHEMICAL DEPOSITION; FILMS; THIOACETAMIDE; BISMUTH;
D O I：
10.1016/0254-0584(95)01538-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bi2S3 thin films have been deposited from an aqueous acidic bath using thioacetamide CH3-CS-NH2 (TAM) as a sulfide ion source. The preparative parameters are optimized and growth mechanism is discussed. X-ray diffractograms indicate that the films are polycrystalline in nature. A microstructural study has been carried out using a scanning electron microscopy technique. From optical absorption studies the energy bandgap of Bi2S3 is estimated to be 1.84 eV. Room temperature resistivity is of the order of 10(5) ohm cm.
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页码：98 / 103
页数：6
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