THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS

被引：0
|
作者：
LIN, YH
LEE, CL
LEI, TF
CHAO, TS
机构：
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30050,TAIWAN
[2] NATL NANO DEVICE LAB,HSINCHU,TAIWAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 05期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF2+ in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.
引用
收藏
页码：164 / 165
页数：2
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