共 50 条
- [1] A GALLIUM ARSENIDE MICROWAVE DIODE PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (04): : 717 - 722
- [2] SOME PROPERTIES OF DIODE STRUCTURES MADE OF SEMIINSULATING GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1460 - &
- [3] SUBMILLIMETER DIODE ON GALLIUM ARSENIDE NANOSTRUCTURE 2013 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES (MSMW), 2013, : 121 - 123
- [6] Properties of epitaxial gallium arsenide prepared from bismuth-based fluxed melts Tech Phys Lett, 11 (873):
- [7] SYNTHESIS AND CHARACTERIZATION OF AS-PREPARED CAPPED GALLIUM-ARSENIDE QUANTUM DOTS ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1995, 209 : 472 - INOR
- [8] INVESTIGATION OF SUPERLUMINESCENCE EMITTED BY A GALLIUM ARSENIDE DIODE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1739 - +
- [10] Properties of epitaxial gallium arsenide prepared from bismuth-based solutions-fusions PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 22 (21): : 23 - 25