A TAYLOR-GALERKIN FINITE-ELEMENT METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR EQUATIONS

被引：4
|
作者：
BOVA, S
CAREY, GF
机构：
[1] Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin, Austin, TX
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1995年 / 14卷 / 12期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/43.476574
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A new Taylor-Galerkin finite element method and adaptive, time-iterative scheme are developed for simulating single-carrier submicron-scale semiconductor device transport with the hydrodynamic model under the assumptions of parabolic energy bands, Boundary conditions are applied using characteristic projections, Numerical studies are conducted to investigate the sensitivity of the given model to some of the parameters contained in typical heat flux and relaxation time models for a one-dimensional, representative test problem.
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页码：1437 / 1444
页数：8
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