INFLUENCE OF GAMMA-IRRADIATION ON THE ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF MANGANESE-COMPENSATED SILICON

被引:0
|
作者
BAKHADYRKHANOV, MK
AZIZOV, KA
TURSUNOV, AA
KHAIDAROV, KK
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1983年 / 17卷 / 06期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:613 / 615
页数:3
相关论文
共 50 条
  • [1] INFLUENCE OF gamma IRRADIATION ON THE ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF MANGANESE-COMPENSATED SILICON.
    Bakhadyrkhanov, M.K.
    Azizov, K.A.
    Tursunov, A.A.
    Khaidarov, K.Kh.
    Soviet physics. Semiconductors, 1983, 17 (06): : 613 - 615
  • [2] THERMAL QUENCHING OF THE PHOTOCONDUCTIVITY OF MANGANESE-COMPENSATED SILICON
    BAKHADYRKHANOV, MK
    TURSUNOV, AA
    KHAIDAROV, K
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 571 - 573
  • [3] THE EFFECT OF GAMMA-IRRADIATION ON PHOTOELECTRIC PROPERTIES OF SILICOSILLENITE
    KOSTYK, VK
    KUDZIN, AY
    UKRAINSKII FIZICHESKII ZHURNAL, 1981, 26 (05): : 751 - 756
  • [4] INSTABILITY OF A CURRENT ASSOCIATED WITH RECOMBINATION WAVES IN MANGANESE-COMPENSATED SILICON
    BAKHADYRKHANOV, MK
    PARMANKULOV, IP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (09): : 1018 - 1020
  • [5] INFLUENCE OF GAMMA-IRRADIATION ON ELECTRICAL-PROPERTIES OF SULFUR-DOPED AND NEUTRON-DOPED SILICON
    SAVIN, EP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (04): : 492 - 493
  • [6] INFLUENCE OF QUENCHING AND GAMMA-IRRADIATION ON PROPERTIES OF N-TYPE SILICON
    YUNUSOV, MS
    MURATOV, Z
    MAKHMUDOV, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (03): : 320 - 322
  • [7] EFFECT OF GAMMA-IRRADIATION INTENSITY ON RECOMBINATION PROPERTIES OF SILICON
    MAK, VT
    ROZENFELD, AB
    SEKRET, AA
    CHISTYAKOV, VP
    KHIVRICH, VI
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1989, 32 (04): : 112 - 114
  • [8] INFLUENCE OF ORIENTED DEFORMATION AND GAMMA-IRRADIATION ON PLATINUM LEVELS IN SILICON
    LEBEDEV, AA
    SULTANOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (01): : 9 - 12
  • [9] INFLUENCE OF GAMMA-IRRADIATION ON PROPERTIES OF LADDER ORGANOSILICON POLYMERS
    ANDRIANOV, KA
    SLONIMSKII, GL
    ZHDANOV, AA
    KVACHEV, YP
    LEVIN, VY
    IVANOV, NV
    MAKAROVA, NN
    RABKINA, AY
    VYSOKOMOLEKULYARNYE SOEDINENIYA SERIYA A, 1978, 20 (05): : 1066 - 1073
  • [10] LOW-FREQUENCY LARGE-AMPLITUDE OSCILLATIONS OF THE CURRENT IN MANGANESE-COMPENSATED SILICON
    BAKHADYRKHANOV, MK
    ZIKRILLAEV, NF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (12): : 1384 - 1385