THE SI P-PARTIAL DENSITY OF STATES IN SINX (0-LESS-THAN-X-LESS-THAN-2.0)

被引：0

作者：

KOJNOK, J

GYARMATI, E

NICKEL, H

SZASZ, A

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST REAKTORWERKSTOFFE, POSTFACH 1913, W-5170 JULICH 1, GERMANY

[2] EOTVOS LORAND UNIV, DEPT SOLID STATE PHYS, H-1088 BUDAPEST, HUNGARY

[3] EOTVOS LORAND UNIV, DEPT ATOM PHYS, SURFACE & INTERFACE PHYS LAB, H-1088 BUDAPEST, HUNGARY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 155卷 / 02期

关键词：

D O I：

10.1016/0022-3093(93)91320-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Some properties of non-stoichiometric amorphous silicon nitride, SiN(x) (0 < x < 2.0), prepared by physical vapour deposition in which hydrogen was excluded from the process, were investigated by X-ray fluorescence spectroscopy. The Si K(beta) and Si K(alpha) emission lines were measured. A non-bonding p-type vacancy state on the top of the upper Si valence band is identified up to the composition x = 1.2. This state was not observed in other studies of hydrogenated SiN(x):H systems. The N2s state derived lower valence band was split from the upper valence band with 2 eV valence band gap. The observed non-linear dependence of the Si p-band on x is inconsistent with a two-phase (Si and Si3N4) linear superposition model of this semiconducting amorphous alloy. The random bonding model is consistent with this dependence.

引用

页码：155 / 164

页数：10

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