GROWTH OF HIGH-QUALITY (100)CDTE FILMS ON (100)GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：11
|
作者：
BICKNELL, RN [1 ]
GILESTAYLOR, NC [1 ]
YANKA, RW [1 ]
SCHETZINA, JF [1 ]
MAGEE, TJ [1 ]
LEUNG, C [1 ]
KAWAYOSKI, H [1 ]
WOOLHOUSE, GR [1 ]
机构：
[1] ARACOR,SUNNYVALE,CA 94086
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期
关键词：
D O I：
10.1116/1.582886
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：417 / 418
页数：2
相关论文
共 50 条
  • [1] High-quality CdTe growth in the (100)-orientation on (100)-GaAs substrates by molecular beam epitaxy
    Koike, K
    Tanaka, T
    Li, SW
    Yano, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 671 - 676
  • [2] High-quality PbTe/CdTe growth on GaAs(100) substrates by molecular beam epitaxy
    Koike, K
    Tanaka, T
    Yano, M
    [J]. PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 39 - 41
  • [3] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    BICKNELL, RN
    YANKA, RW
    GILES, NC
    SCHETZINA, JF
    MAGEE, TJ
    LEUNG, C
    KAWAYOSHI, H
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 313 - 315
  • [4] THE GROWTH OF HIGH-QUALITY CDTE ON GAAS BY MOLECULAR-BEAM EPITAXY
    RENO, JL
    CARR, MJ
    GOURLEY, PL
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1006 - 1012
  • [5] Growth of InNAs on GaAs(100) substrates by molecular-beam epitaxy
    Sakai, S
    Cheng, TS
    Foxon, TC
    Sugahara, T
    Naoi, Y
    Naoi, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 471 - 475
  • [6] GROWTH OF ZNSE FILMS ON GAAS (100) SUBSTRATES BY CONVENTIONAL AND PULSED MOLECULAR-BEAM EPITAXY
    LILJA, J
    KESKINEN, J
    ASONEN, H
    PESSA, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 522 - 524
  • [7] EPITAXY OF FEAL FILMS ON GAAS(100) BY MOLECULAR-BEAM EPITAXY
    KUZNIA, JN
    WOWCHAK, AM
    COHEN, PI
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (06) : 561 - 565
  • [8] CLEANING CHEMISTRY OF GAAS(100) AND INSB(100) SUBSTRATES FOR MOLECULAR-BEAM EPITAXY
    VASQUEZ, RP
    LEWIS, BF
    GRUNTHANER, FJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 791 - 794
  • [9] (100) AND (111) ORIENTED CDTE GROWN ON (100) ORIENTED GAAS BY MOLECULAR-BEAM EPITAXY
    BALLINGALL, JM
    WROGE, ML
    LEOPOLD, DJ
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1273 - 1275
  • [10] HGTE-CDTE SUPERLATTICES GROWN ON GAAS (100) ORIENTED SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    BALLINGALL, JM
    LEOPOLD, DJ
    WROGE, ML
    PETERMAN, DJ
    MORRIS, BJ
    BROERMAN, JG
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 871 - 873
12345