DONOR DOPING OF GA IN ZNO VARISTOR GRAIN-BOUNDARY

被引：20
|
作者：
GUPTA, TK [1 ]
机构：
[1] ALCOA LABS,CTR TECH,ALCOA CTR,PA 15069
来源：
JOURNAL OF MATERIALS RESEARCH | 1994年 / 9卷 / 09期
关键词：
D O I：
10.1557/JMR.1994.2213
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of Ga doping on the grain boundary properties of a ZnO varistor has been presented in this note. Within the range of doping level studied, it is shown that Ga acts as a donor at the grain boundary and behaves similar to that of Al.1 The grain boundary doping behavior of both Ga and Al, when acting as donors, can therefore be represented by the same defect model.
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页码：2213 / 2215
页数：3
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