AUGER-ELECTRON SPECTROSCOPY SPUTTER DEPTH PROFILES ON ALXGA1-XAS PROTECTED BY AS AND GAAS ULTRATHIN LAYERS

被引：6
|
作者：
ETIENNE, P
ALNOT, P
ROCHETTE, JF
MASSIES, J
机构：
[1] THOMSON SEMICOND,DIV ARSENIURE GALLIUM,F-91401 ORSAY,FRANCE
[2] CNRS,PHYS SOLIDE ENERGIE SOLAIRE LAB,VALBONNE,FRANCE
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 06期
关键词：
D O I：
10.1116/1.583509
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1301 / 1305
页数：5
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