GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS

被引：89

|

作者：

ASBECK, PM

MILLER, DL

ANDERSON, RJ

EISEN, FH

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 08期

关键词：

D O I：

10.1109/EDL.1984.25927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：310 / 312

页数：3

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