DOPANT ATOM AND CLUSTER ION BEHAVIOR IN SILICON ARISING IN SIMS DEPTH PROFILING

被引：1
|
作者：
RICHTER, CE
TRAPP, M
机构：
来源：
INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES | 1984年 / 62卷 / 01期
关键词：
D O I：
10.1016/0168-1176(84)80067-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
引用
收藏
页码：25 / 32
页数：8
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