HIGH-EFFICIENCY PULSED GAAS PIN AVALANCHE-DIODES FOR V-BAND OSCILLATORS

被引:4
|
作者
HUBER, S
CLAASSEN, M
GROTHE, H
机构
关键词
D O I
10.1049/el:19890576
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:855 / 856
页数:2
相关论文
共 50 条
  • [1] GAAS PIN AVALANCHE-DIODES FOR PULSED V-BAND OSCILLATORS
    HUBER, S
    CLAASSEN, M
    HARTH, W
    GROTHE, H
    MICROWAVE JOURNAL, 1990, 33 (10) : 107 - +
  • [2] GAAS PIN AVALANCHE-DIODES FOR PULSED MILLIMETER-WAVE OSCILLATORS
    HUBER, S
    GAUL, L
    CLAASSEN, M
    AEU-ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1993, 47 (01): : 13 - 21
  • [3] HIGH-EFFICIENCY V-BAND GAAS IMPATT DIODES
    MA, YE
    BENKO, E
    TRINH, T
    ERICKSON, LP
    MATTORD, TJ
    ELECTRONICS LETTERS, 1984, 20 (05) : 212 - 214
  • [4] HIGH-EFFICIENCY FREQUENCY MULTIPLICATION WITH GAAS AVALANCHE-DIODES
    KRAMER, BM
    DERYCKE, AC
    FARRAYRE, A
    MASSE, CF
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (11) : 861 - 863
  • [5] HIGH-EFFICIENCY PULSED GAAS AVALANCHE DIODES
    MELICK, DR
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (03): : 435 - &
  • [6] EFFECTS OF TUNNELING ON HIGH-EFFICIENCY IMPATT AVALANCHE-DIODES
    CHIVE, M
    CONSTANT, E
    LEFEBVRE, M
    PRIBETICH, J
    PROCEEDINGS OF THE IEEE, 1975, 63 (05) : 824 - 826
  • [8] PHYSICS OF HIGH-EFFICIENCY GALLIUM-ARSENIDE AVALANCHE-DIODES
    CULSHAW, B
    BLAKEY, PA
    GIBLIN, RA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1066 - 1066
  • [9] HIGH-EFFICIENCY ALGAAS/INGAAS HETEROSTRUCTURE FET OSCILLATORS AT V-BAND
    TSERNG, HQ
    SAUNIER, P
    ELECTRONICS LETTERS, 1990, 26 (24) : 2048 - 2049
  • [10] CITATION CLASSIC - A THEORY FOR THE HIGH-EFFICIENCY MODE OF OSCILLATION IN AVALANCHE-DIODES
    CLORFEINE, AS
    CURRENT CONTENTS/ENGINEERING TECHNOLOGY & APPLIED SCIENCES, 1981, (32): : 16 - 16