COPPER INCORPORATION IN ZNO DURING LP-MOCVD

The MOCVD of ZnO layers, at a reduced reactor pressure and using DMZ.2THF and tertiary butanol as zinc and oxygen sources, resp., presents a number of advantages compared with the deposition at normal pressure. This also applies to the copper incorporation by means of cyclopentadienyl-copper(I)-triethyl phosphine. For the copper concentration in the ZnO layers, which linearly increases with the flow rate of the organocopper compound, values > 10(20) cm-3 can be achieved. Even in case of high concentrations, the desired compensating effect of the copper is, for the time being, comparatively little, but increases considerably after a thermal retreatment of the layers. Some chemical-defect aspects of ZnO will be discussed for the purpose of interpretation.