IMPROVED SPEED LOW POWER AND LOW VOLTAGE SRAM DESIGN FOR LDPC APPLICATION CIRCUITS

被引:0
|
作者
Selvam, Rosalind Deena Kumari [1 ]
Senthilpari, C. [2 ]
Lini, Lee
机构
[1] Multimedia Univ, Fac Comp & Informat, Cyberjaya 63100, Selangor De, Malaysia
[2] Multimedia Univ, Fac Engn, Cyberjaya 63100, Selangor De, Malaysia
关键词
Improved speed; Dynamic logic; SRAM; LDPC; Throughput; Power dissipation;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The design of SRAM has evolved to suffice the need of the industry in terms of speed, power dissipation and other parameters. This paper proposed a SRAM design and an attempt has been made to design circuits using dynamic logic and pass transistor logic to obtain better performance in terms of speed, power dissipation and throughput. The dynamic logic would maintain voltage degradation by using the PMOS and NMOS transistor just as the CMOS logic, even though the design cell uses majority NMOS transistors. The proposed circuits are simulated using BSIM for different CMOS feature sizes of 70 nm, 90 nm, 120 nm and 180 nm. The results obtained have been analysed and shows that the proposed circuit of 8T performs much better as compared to other circuit configurations. There is significant improvement in power dissipation by 99.64 %, delay by 99.9 %, throughput of 490 Mbps and power delay product of 99.96 %.
引用
收藏
页码:822 / 837
页数:16
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