THE HALL-EFFECT AND BEND RESISTANCE IN BALLISTIC QUANTUM WIRES CONSTRUCTED OUT OF QUANTUM DOTS

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作者
HANG, S
KIRCZENOW, G
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We present a tight-binding theory of the four-terminal resistances of junctions of single-mode ballistic quantum wires constructed out of quantum dots. The Hall and bend resistances depend critically on the direct coupling between quantum dots in different quantum wires. We predict that under some conditions such systems should exhibit quenching of the Hall effect as well as negative Hall resistances due to quantum interference. The structures that we discuss are realizable experimentally.
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页码:955 / 960
页数:6
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