Development and characteristics analysis of recessed-gate MOS HEMT

被引：7

作者：

Wang Chong ^{[1
]}

Ma Xiaohua ^{[1
]}

Feng Qian ^{[1
]}

Hao Yue ^{[1
]}

Zhang Jincheng ^{[1
]}

Mao Wei

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 05期

基金：

中国国家自然科学基金;

关键词：

high electron mobility transistors; AlGaN/GaN; recessed-gate; dielectric gate;

D O I：

10.1088/1674-4926/30/5/054002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An AlGaN/GaN recessed-gate MOSHEMT was fabricated on a sapphire substrate. The device, which has a gate length of 1 mu m and a source-drain distance of 4 mu m, exhibits a maximum drain current density of 684 mA/mm at V-gs = 4 V with an extrinsic transconductance of 219 mS/mm. This is 24.3% higher than the transconductance of conventional AlGaN/GaN HEMTs. The cut-off frequency and the maximum frequency of oscillation are 9.2 GHz and 14.1 GHz, respectively. Furthermore, the gate leakage current is two orders of magnitude lower than for the conventional Schottky contact device.

引用

页码：054002 / 1

页数：4

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