THERMAL-OXIDATION OF INASXP1-X

被引：5
|
作者：
SCHWARTZ, GP
THIEL, FA
GUALTIERI, GJ
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 03期
关键词：
D O I：
10.1116/1.572504
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：1252 / 1256
页数：5
相关论文
共 50 条
  • [1] VAPOR GROWTH OF INASXP1-X
    MIZUNO, O
    ARAI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (12) : 1955 - 1958
  • [2] Incorporation of As-2 in InAsxP1-x and its application to InAsxP1-x/InP quantum well structures
    Hopkinson, M
    David, JPR
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 1033 - 1038
  • [3] Terahertz emission mechanisms in InAsxP1-x
    Lockhart, Patric
    Dutta, P. S.
    Han, Pengyu
    Zhang, X. -C.
    APPLIED PHYSICS LETTERS, 2008, 92 (01)
  • [4] ION-IMPLANTATION IN INASXP1-X
    DAVIES, DE
    HAWLEY, JJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1066 - 1066
  • [5] CALCULATIONS OF THE ELECTRON-MOBILITY OF INASXP1-X
    CHIN, VWL
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1991, 52 (09) : 1193 - 1195
  • [6] InAsxP1-x V-groove quantum wires
    Kappelt, M
    Turck, V
    Bimberg, D
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 587 - 590
  • [7] LOCAL STRUCTURAL INVESTIGATION OF BURIED INASXP1-X/INP INTERFACES
    LAMBERTI, C
    BORDIGA, S
    BOSCHERINI, F
    PASCARELLI, S
    SCHIAVINI, GM
    FERRARI, C
    LAZZARINI, L
    SALVIATI, G
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (08) : 4581 - 4586
  • [8] Self-consistent determination of the band offsets in InAsxP1-x/InP strained-layer quantum wells and the bowing parameter of bulk InAsxP1-x
    Beaudoin, M
    Bensaada, A
    Leonelli, R
    Desjardins, P
    Masut, RA
    Isnard, L
    Chennouf, A
    LEsperance, G
    PHYSICAL REVIEW B, 1996, 53 (04): : 1990 - 1996
  • [9] Dielectric functions and electronic structure of InAsxP1-x films on InP
    Choi, S. G.
    Palmstrom, C. J.
    Kim, Y. D.
    Aspnes, D. E.
    Kim, H. J.
    Chang, Yia-Chung
    APPLIED PHYSICS LETTERS, 2007, 91 (04)
  • [10] EQUILIBRIUM COMPOSITION RELATION IN VAPOR GROWTH OF INASXP1-X - COMMENT
    KAJIYAMA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (07) : 1057 - 1058
12345