A SMALL-SIGNAL THEORY OF AVALANCHE NOISE IN IMPATT DIODES

被引：162

|

作者：

GUMMEL, HK

BLUE, JL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 09期

关键词：

D O I：

10.1109/T-ED.1967.16005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：569 / &

相关论文

共 50 条

[1] SMALL-SIGNAL AND NOISE EQUIVALENT CIRCUIT FOR IMPATT DIODES
GUPTA, MS
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (09) : 591 - 594
[2] SMALL-SIGNAL NOISE MEASURE OF AVALANCHE-DIODES
KUVAS, RL
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 329 - 336
[3] SMALL-SIGNAL MODELS FOR IMPATT DIODES
KREMER, R
[J]. AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1975, 29 (7-8) : 296 - 304
[4] SMALL-SIGNAL ANALYSIS OF IMPATT DIODES
MATHUR, PC
SHARMA, V
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1975, 32 (02): : 611 - 615
[5] SMALL-SIGNAL NOISE MEASURE OF GAAS PIN-AVALANCHE DIODES
HARTH, W
[J]. AEU-ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1992, 46 (01): : 54 - 57
[6] TEMPERATURE-DEPENDENCE OF SMALL-SIGNAL ADMITTANCE OF IMPATT DIODES
GALL, A
[J]. ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK, 1974, 28 (02): : 61 - 65
[7] COMPUTER-AIDED SMALL-SIGNAL CHARACTERIZATION OF IMPATT DIODES
DUNN, CN
DALLEY, JE
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1969, MT17 (09) : 691 - +
[8] EFFECT OF CARRIER DIFFUSION ON THE SMALL-SIGNAL BEHAVIOR OF IMPATT DIODES
BRAZIL, TJ
SCANLAN, SO
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (05) : 786 - 795
[9] COMPUTER-SIMULATION OF THE SMALL-SIGNAL ADMITTANCE AND NEGATIVE-RESISTANCE OF DOUBLE AVALANCHE REGION IMPATT DIODES
BANERJEE, JP
ROY, SK
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (06): : 575 - 580
[10] EFFECTS OF CARRIER DIFFUSION ON THE SMALL-SIGNAL BEHAVIOR OF IMPATT DIODES - COMMENTS
BLAKEY, PA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 299 - 299

← 1 2 3 4 5 →