首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
PHOTO-ELECTROCHEMICAL ETCHING OF INTEGRAL LENSES ON INGAASP/INP LIGHT-EMITTING-DIODES
被引:63
|
作者
:
OSTERMAYER, FW
论文数:
0
引用数:
0
h-index:
0
OSTERMAYER, FW
KOHL, PA
论文数:
0
引用数:
0
h-index:
0
KOHL, PA
BURTON, RH
论文数:
0
引用数:
0
h-index:
0
BURTON, RH
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1983年
/ 43卷
/ 07期
关键词
:
D O I
:
10.1063/1.94461
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:642 / 644
页数:3
相关论文
共 50 条
[1]
PREPARATION AND PROPERTIES OF MONOLITHICALLY INTEGRATED LENSES ON INGAASP/INP LIGHT-EMITTING-DIODES
HEINEN, J
论文数:
0
引用数:
0
h-index:
0
HEINEN, J
ELECTRONICS LETTERS,
1982,
18
(19)
: 831
-
832
[2]
PLASMA SEPARATION OF INGAASP-INP LIGHT-EMITTING-DIODES
BURTON, RH
论文数:
0
引用数:
0
h-index:
0
BURTON, RH
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
KERAMIDAS, VG
论文数:
0
引用数:
0
h-index:
0
KERAMIDAS, VG
APPLIED PHYSICS LETTERS,
1980,
37
(04)
: 411
-
412
[3]
ION-BEAM ETCHING OF INP AND ITS APPLICATION TO THE FABRICATION OF HIGH RADIANCE INGAASP/INP LIGHT-EMITTING-DIODES
WADA, O
论文数:
0
引用数:
0
h-index:
0
WADA, O
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(10)
: 2373
-
2380
[4]
CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES
CHIN, AK
论文数:
0
引用数:
0
h-index:
0
CHIN, AK
ZIPFEL, CL
论文数:
0
引用数:
0
h-index:
0
ZIPFEL, CL
MAHAJAN, S
论文数:
0
引用数:
0
h-index:
0
MAHAJAN, S
ERMANIS, F
论文数:
0
引用数:
0
h-index:
0
ERMANIS, F
DIGIUSEPPE, MA
论文数:
0
引用数:
0
h-index:
0
DIGIUSEPPE, MA
APPLIED PHYSICS LETTERS,
1982,
41
(06)
: 555
-
557
[5]
HIGH-TEMPERATURE DEGRADATION OF INGAASP-INP LIGHT-EMITTING-DIODES
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
ZIPFEL, CL
论文数:
0
引用数:
0
h-index:
0
ZIPFEL, CL
KERAMIDAS, VG
论文数:
0
引用数:
0
h-index:
0
KERAMIDAS, VG
JOURNAL OF APPLIED PHYSICS,
1981,
52
(08)
: 5377
-
5380
[6]
ELECTROCHEMICAL LIGHT-EMITTING-DIODES
BUTLER, MA
论文数:
0
引用数:
0
h-index:
0
BUTLER, MA
GINLEY, DS
论文数:
0
引用数:
0
h-index:
0
GINLEY, DS
APPLIED PHYSICS LETTERS,
1980,
36
(10)
: 845
-
847
[7]
DEGRADATION OF 1.3-MUM INP INGAASP LIGHT-EMITTING-DIODES WITH MISFIT DISLOCATIONS
CHIN, AK
论文数:
0
引用数:
0
h-index:
0
CHIN, AK
ZIPFEL, CL
论文数:
0
引用数:
0
h-index:
0
ZIPFEL, CL
CHIN, BH
论文数:
0
引用数:
0
h-index:
0
CHIN, BH
DIGIUSEPPE, MA
论文数:
0
引用数:
0
h-index:
0
DIGIUSEPPE, MA
APPLIED PHYSICS LETTERS,
1983,
42
(12)
: 1031
-
1033
[8]
LIGHT-CURRENT CHARACTERISTICS OF INGAASP LIGHT-EMITTING-DIODES
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
CHIN, AK
论文数:
0
引用数:
0
h-index:
0
CHIN, AK
DIGIUSEPPE, MA
论文数:
0
引用数:
0
h-index:
0
DIGIUSEPPE, MA
KERAMIDAS, VG
论文数:
0
引用数:
0
h-index:
0
KERAMIDAS, VG
APPLIED PHYSICS LETTERS,
1981,
39
(05)
: 405
-
407
[9]
TEMPERATURE CHARACTERISTICS OF INGAASP LASER-DIODES AND LIGHT-EMITTING-DIODES
KAMIYA, T
论文数:
0
引用数:
0
h-index:
0
KAMIYA, T
KAMATA, N
论文数:
0
引用数:
0
h-index:
0
KAMATA, N
JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS,
1983,
5
: 59
-
69
[10]
MECHANISM OF CATASTROPHIC DEGRADATION IN INGAASP/INP DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING-DIODES AND GAALAS DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING-DIODES APPLIED WITH PULSED LARGE CURRENT
UEDA, O
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
UEDA, O
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
YAMAKOSHI, S
SANADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
SANADA, T
UMEBU, I
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
UMEBU, I
KOTANI, T
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
KOTANI, T
HASEGAWA, O
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
HASEGAWA, O
JOURNAL OF APPLIED PHYSICS,
1982,
53
(12)
: 9170
-
9179
←
1
2
3
4
5
→