ELECTRIC-FIELD EFFECT ON THE TEMPERATURE-DEPENDENCE OF THE (EC-0.33EV) CENTER INTRODUCTION RATE UNDER GAMMA-IRRADIATION IN N-GAAS

The temperature dependence of the E3 (Ec — 0.33 eV) defect introduction rate in epitaxial n‐GaAs (n = 3 × 1015 cm−3) in the neutral region (NR) and in the space‐charge region (SCR) of Schottky barrier diodes under γ‐irradiation is studied by DLTS method at temperatures 77 to 580 K. An analytical dependence, describing the experimental results, is obtained on the basis of the Frenkel pair (FP) model in which the recombination barrier depends on the charge state of the pair components. Under irradiation FP are assumed to be formed both, in the neutral and charge states. The E3 center introduction rate is determined in this model by the FP recombination times in the initial (protopair) and in the stationary charge states in SCR and NR as well as by the times of the pair recharging. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA