Plasma-developable photoresist system based on polysiloxane formation at the irradiated surface - A liquid-phase deposition method

被引：0
|
作者：
Shirai, M [1 ]
Nogi, N [1 ]
Tsunooka, M [1 ]
Matsuo, T [1 ]
机构：
[1] MATSUSHITA ELECT IND CO LTD, SEMICOND RES CTR, MORIGUCHI, OSAKA 570, JAPAN
来源：
MICROELECTRONICS TECHNOLOGY: POLYMERS FOR ADVANCED IMAGING AND PACKAGING | 1995年 / 614卷
关键词：
D O I：
暂无
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
Polysiloxane formation at the near surface of the UV irradiated polymer films using a liquid-phase deposition method was studied. Poly(methacrylates) bearing 1,2,3,4-tetrahydro-1-naphthylideneamino p-styrenesulfonate (NIS) units or 9-fluorenilideneamino p-styrenesulfonate CFIS) units was prepared. When the irradiated polymer films were dipped in a solution containing alkoxysilanes, polysiloxane networks were formed at unirradiated areas was observed. Factors affecting the polysiloxane formation rate were studied. The polymer films irradiated at 254 nm and subsequently modified by the alkoxysilane solution showed good etching resistance to an oxygen plasma. The liquid-phase modification method was compared with the vapor-phase modification method.
引用
收藏
页码：318 / 332
页数：15
相关论文
共 11 条
12