Investigation of the I-V Characteristics in Hybrid Thick Film Transistors

The I-V characteristics in hybrid thick film transistors with channels made from a composite of milled P type silicon and two classes of polymeric binders, namely refined linseed oil and acrylic resin fabricated on standard bottom gate transistor structure with SiO2 dielectric layer have been investigated. The transistors demonstrated a varistor-like I-V characteristics, which fits the model, I ae V n, where I is the drain current, V is the drain-source voltage and n is the power law exponent that was observed to be modulated by application of gate voltages. The transfer characteristic shows that both transistor types exhibit ambipolar behavior and the carrier mobility was calculated for holes as 1.4x10(-3) cm(2)/Vs and the electron mobility of 1.7x10(-3) cm(2)/Vs for the refined linseed oil based transistor, while the acrylic based transistor exhibiting holes and electron mobility of about 1.6x10(-3) cm(2) /Vs.