EPITAXIAL-GROWTH OF SPUTTERED AL FILMS ON SI(001) SUBSTRATES

被引：8

作者：

KATO, M ^{[1
]}

NIWA, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD,DIV BASIC PROC DEV,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1991年 / 64卷 / 03期

关键词：

D O I：

10.1080/13642819108207622

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

When Al is deposited on to Si(001) by sputtering, the Al(110)/Si(001) epitaxial relationship is realized. Its crystallography has been analysed from the viewpoint of lattice match geometry and misfit strain energy. From these analyses, it has been found that the adoption of the idea of superlattice unit cells is useful in considering the lattice correspondence between Al and Si planes at the interface. With this idea, together with previously-proposed simple criteria, the crystallography of the Al(110)/Si(001) epitaxy has been explained successfully.

引用

页码：317 / 326

页数：10

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