NATURE OF CONDUCTION AND SWITCHING IN SIO2

被引：53
|
作者：
SHATZKES, M [1 ]
AVRON, M [1 ]
ANDERSON, RM [1 ]
机构：
[1] IBM CORP, SYST PROD DIV, E FISHKILL, HOPEWELL JUNCTION, NY 12533 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 05期
关键词：
D O I：
10.1063/1.1663546
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2065 / 2077
页数：13
相关论文
共 50 条
  • [1] On the switching behaviour of post-breakdown conduction in ultra-thin SiO2 films
    Chen, TP
    Tse, MS
    Zeng, X
    Fung, S
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (09) : 793 - 797
  • [2] ELECTRONIC CONDUCTION IN THERMALLY GROWN SIO2
    LENZLING.M
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : C86 - &
  • [3] CONDUCTANCE SWITCHING OF THERMALLY GROWN SIO2
    WILMSEN, CW
    ALLENDER, MC
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1912 - 1914
  • [4] Analysis of the conduction mechanisms responsible for multilevel bipolar resistive switching of SiO2/Si multilayer structures
    Gonzalez-Flores, K. E.
    Holley, P.
    Cabanas-Tay, S. A.
    Perez-Garcia, S. A.
    Licea-Jimenez, L.
    Palacios-Huerta, L.
    Aceves-Mijares, M.
    Moreno-Moreno, M.
    Morales-Sanchez, A.
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2020, 137
  • [5] Influence of SiO2 Layer on Resistive Switching Properties of SiO2/CuxO Stack Structure
    Liu, Chih-Yi
    Li, Yu-Chen
    Lai, Chun-Hung
    Liu, Shih-Kun
    [J]. FUNCTIONAL AND ELECTRONIC MATERIALS, 2011, 687 : 106 - +
  • [6] CONDUCTION OF BEAM DEPOSITED ELECTRONS THROUGH SIO2
    PICKAR, KA
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (09) : 686 - &
  • [7] DEFECT-RELATED BREAKDOWN AND CONDUCTION IN SIO2
    SHATZKES, M
    AVRON, M
    GDULA, RA
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (04) : 469 - 479
  • [8] DC Conduction Properties of SiO2/LDPE Nanocomposite
    Yang Jia-ming
    Wang Xuan
    Zheng Chang-ji
    Zhao Hong
    Lei Qing-quan
    [J]. 2012 IEEE 10TH INTERNATIONAL CONFERENCE ON THE PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS (ICPADM), 2012,
  • [9] Heat conduction in ZnS:SiO2 composite films
    Kim, EK
    Kwun, SI
    Lee, SM
    Seo, H
    Yoon, JG
    [J]. PHYSICAL REVIEW B, 2000, 61 (09): : 6036 - 6040
  • [10] Resistive Switching in Nanogap Systems on SiO2 Substrates
    Yao, Jun
    Zhong, Lin
    Zhang, Zengxing
    He, Tao
    Jin, Zhong
    Wheeler, Patrick J.
    Natelson, Douglas
    Tour, James M.
    [J]. SMALL, 2009, 5 (24) : 2910 - 2915
12345