ELECTRON NUCLEAR DOUBLE-RESONANCE AND ELECTRON-STRUCTURE OF BORON IMPURITY CENTERS IN 6H-SIC

被引:0
|
作者
PETRENKO, TL
TESLENKO, VV
MOKHOV, EN
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 09期
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The double electron-nuclear resonance spectrum of boron-doped silicon carbide was recorded for the first time. The hyperfine and quadrupole interaction constants were determined for a boron impurity center with a g tensor of axial symmetry. Assuming that the nondegenerate A level was the ground state, the MO LCAO method was used to analyze the quadrupole interaction with the B-11 nucleus. A model of a boron impurity center in the form of a pi-electron radical BC3 with a planar configuration was proposed. This model accounted qualitatively for the characteristic features of the hyperfine interaction with the B-11 nucleus.
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页码:874 / 878
页数:5
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