EXACT LINEAR ADMITTANCE OF N+-N-N+ SEMICONDUCTOR STRUCTURES

被引：8
|
作者：
ERANEN, S [1 ]
SINKKONEN, J [1 ]
机构：
[1] HELSINKI UNIV TECHNOL,ELECTRON PHYS LAB,SF-02150 ESPOO 15,FINLAND
来源：
PHYSICAL REVIEW B | 1985年 / 32卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.32.5447
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5447 / 5448
页数：2
相关论文
共 50 条
  • [1] LOCAL MICROWAVE-HEATING OF THE ELECTRONS IN SEMICONDUCTOR STRUCTURES OF N-N+,N+-N-N+ TYPE
    BILENKO, DI
    KUTSEVLYAK, PI
    LUNKOV, AE
    RADIOTEKHNIKA I ELEKTRONIKA, 1980, 25 (03): : 606 - 611
  • [2] NOISE IN MICRON N+-N-N+ STRUCTURES MADE OF GAAS
    BAREIKIS, V
    LIBERIS, Y
    MATULENIS, A
    MILYUSHITE, R
    SAKALAS, P
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 558 - 560
  • [3] NOISE AND DIFFUSION IN SHORT N+-N-N+ INP STRUCTURES
    BARELKIS, V
    BILKIS, Z
    LIBERIS, Y
    SAKALAS, P
    SHALTIS, R
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 656 - 658
  • [4] Electronic transport and noise in ballistic n+-n-n+ semiconductor nanodiodes
    Gomila, G
    Cantalapiedra, IR
    NANOTECHNOLOGY, 2003, 14 (02) : 172 - 176
  • [5] Subnanosecond Avalanche Switching Simulations of n+-n-n+ Silicon Structures
    Podolska, N. I.
    Rodin, P. B.
    SEMICONDUCTORS, 2019, 53 (03) : 379 - 384
  • [6] Simulation of quantum dissipative transport in nanoscale n+-n-n+ structures
    Gamal, Salah H.
    2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2008, : 201 - 203
  • [7] CURRENT RESPONSE OF N+-N-N+ STRUCTURE MADE OF A 2-VALLEY SEMICONDUCTOR
    RADUNOVIC, J
    RADUNOVIC, D
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1994, 76 (06) : 1063 - 1072
  • [8] EFFECTS OF DOPING VARIATIONS ON ELECTRON-TRANSPORT IN GAAS N+-N-N+ STRUCTURES
    TIAN, H
    KIM, KW
    LITTLEJOHN, MA
    MISHRA, UK
    HASHEMI, M
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (12) : 5695 - 5701
  • [9] Gunn effect and THz frequency power generation in n+-n-n+ GaN structures
    Gruzinskis, V
    Zhao, JH
    Shiktorov, P
    Starikov, E
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS, 1999, 297-2 : 341 - 344
  • [10] STEADY-STATE ELECTRON-TRANSPORT IN SHORT GAAS N+-N-N+ STRUCTURES
    GRUZINSKIS, V
    REKLAITIS, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (08) : 754 - 757
12345