NOVEL LOW-VOLTAGE LOW-POWER FULL-SWING BICMOS CIRCUITS

被引：8
|
作者：
ELRABAA, MS
OBRECHT, MS
ELMASRY, MI
机构：
[1] VLSI Research Group, Department of Electrical and Computer Engineering, University of Waterloo, Waterloc, Ontario
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1994年 / 29卷 / 02期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1109/4.272111
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel BiCMOS full-swing circuit technique with superior performance over CMOS down to 1.5 V is proposed. A conventional noncomplementary BiCMOS process is used. The proposed pull-up configuration is based on a capacitively coupled feedback circuit. Several pull-down options were examined and compared, and the results are reported. Several cells were implemented using the novel circuit technique; simple buffers, logic gates, and master-slave latches. Their performance, regarding speed, area, and power, was compared to that of CMOS for different technologies and supply voltages. Both device and circuit simulations were used. A design procedure for the feedback circuit and the effects of scaling on that procedure were studied and reported.
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页码：86 / 94
页数：9
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