CHARACTERISTICS OF RADIATION DEFECT FORMATION PROCESSES IN SI-GE CRYSTALS

被引：0
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作者：
KHIRUNENKO, LI
SHAKHOVTSOV, VI
SHINKARENKO, VK
SHPINAR, LI
YASKOVETS, II
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 03期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：345 / 347
页数：3
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