NEGATIVE PHOTOCONDUCTIVITY OF AL-SI3N4-N-GAAS METAL-INSULATOR-SEMICONDUCTOR STRUCTURES

被引:0
|
作者
MARONCHUK, YE
SENOSHENKO, OV
机构
[1] NOVOSIBIRSK STATE UNIV,NOVOSIBIRSK,USSR
[2] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK,USSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 8卷 / 07期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:895 / 896
页数:2
相关论文
共 50 条
  • [1] ELECTRICAL CHARACTERISTICS OF SI3N4/SI/GAAS METAL-INSULATOR-SEMICONDUCTOR CAPACITOR
    MUI, DSL
    LIAW, H
    DEMIREL, AL
    STRITE, S
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1991, 59 (22) : 2847 - 2849
  • [2] Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate
    Park, DG
    Diatezua, DM
    Chen, Z
    Mohammad, SN
    Morkoc, H
    CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, 1997, 448 : 327 - 331
  • [3] Physical and electrical properties of a Si3N4/Si/GaAs metal-insulator-semiconductor structure
    Chen, Z
    Gong, DW
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) : 4205 - 4210
  • [5] PHOTOCAPACITANCE OF MIS STRUCTURE AL-SI3N4-N-GAAS
    KLOSE, H
    MARONCHUK, YE
    SENOSHENKO, OV
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 21 (02): : 659 - 664
  • [6] Si3N4/Si/In0.05Ga0.95As/n-GaAs metal-insulator-semiconductor devices
    Park, DG
    Li, D
    Tao, M
    Fan, ZF
    Botchkarev, AE
    Mohammad, SN
    Morkoc, H
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) : 516 - 523
  • [7] Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structure using a Si interlayer
    Park, DG
    Chen, Z
    Botchkarev, AE
    Mohammad, SN
    Morkoc, H
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1996, 74 (03): : 219 - 234
  • [8] Characteristics of Si3N4/Si/n-GaAs metal-insulator-semiconductor interfaces grown on GaAs(111)B substrate
    Park, DG
    Diatezua, DM
    Chen, Z
    Mohammad, SN
    Morkoc, H
    APPLIED PHYSICS LETTERS, 1996, 69 (20) : 3025 - 3027
  • [9] Impedance spectroscopy of Al/AlN/n-Si metal-insulator-semiconductor (MIS) structures
    Schmidt, Rainer
    Mayrhofer, Patrick
    Schmid, Ulrich
    Bittner, Achim
    JOURNAL OF APPLIED PHYSICS, 2019, 125 (08)
  • [10] Characteristics of Si3N4/GaAs metal-insulator-semiconductor interfaces with coherent Si/Al0.3Ga0.7As interlayers
    Park, DG
    Chen, Z
    Morkoc, H
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (09) : 1076 - 1082