SPIN-ON METAL N-GAAS CONTACTS - AN INTERFACE STATE DENSITY ANALYSIS

被引：0
|
作者：
PRASAD, K
机构：
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 2263, Nanyang Avenue
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 27卷 / 2-3期
关键词：
GALLIUM ARSENIDE; SCHOTTKY BARRIER;
D O I：
10.1016/0921-5107(94)90136-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Metal-semiconductor Schottky contacts were fabricated using spin-on Pt, Pd and Ru metals and GaAs. An interface state density analysis of these Schottky contacts was carried out and compared with those formed using conventionally evaporated metallic sources. The results show that the metal-semiconductor interface formed using spin-on metals is comparable with that of conventionally evaporated metallic sources.
引用
收藏
页码：155 / 157
页数：3
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