DEPOSITION AND ELECTRICAL CHARACTERIZATION OF VERY THIN SRTIO3 FILMS FOR ULTRA LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION

被引：74

作者：

HWANG, CS

PARK, SO

KANG, CS

CHO, HJ

KANG, HK

AHN, ST

LEE, MY

机构：

[1] Semiconductor R and D center, Samsung electronics Co.Ltd, Kiheung-eup

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

THIN FILMS; SRTIO3; SPUTTERING; DEPLETION LAYER; LEAKAGE CURRENT; CAPACITANCE;

D O I：

10.1143/JJAP.34.5178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrTiO3 thin films are deposited on Pt/SiO2/Si substrates using RF magnetron sputtering in a temperature range from 200 degrees C to 600 degrees C. The film deposited at 600 degrees C shows the best dielectric property and leakage current characteristics due to its good crystallinity and stoichiometric composition. Dielectric constant of the film deposited at 600 degrees C decreases with decreasing thickness from 235 at 120 nm to 145 at 30 nm. Leakage current shows a constant value of about 30 nA/cm(2) at 1.6 V in a thickness range from 50 nm to 120 nm but increases rapidly to 5 mu A/cm(2) at 30 nm. The electrical properties of the films are explained by a model of thr Pt/SrTiO3/Pt capacitor based on the band structure.

引用

页码：5178 / 5183

页数：6

共 46 条

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Samsung Electronics Co, Ltd, Kyungki-do, Korea, Republic of
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 9 B (5178-5183):
[2] STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF SRTIO3 THIN-FILMS FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATIONS
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HWANG, CS
PARK, SO
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KANG, HK
LEE, SI
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APPLIED PHYSICS LETTERS, 1995, 67 (19) : 2819 - 2821
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APPLIED PHYSICS LETTERS, 2008, 92 (22)
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Chung, HJ
Woo, SI
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (01): : 275 - 280
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PHYSICAL REVIEW B, 2017, 95 (14)
[8] Structural and electrical characterization of SrTiO3 thin films prepared by metal organic chemical vapor deposition
Yamaguchi, Hiromu, 1600, (32):
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APPLIED SURFACE SCIENCE, 1996, 96-8 : 784 - 790
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